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Jaya, T.
- Detection of Selfish Nodes in Wireless Mesh Networks using Hierarchial Clustering
Abstract Views :134 |
PDF Views:3
Authors
Affiliations
1 Dept of ETCE, Sathyabama University, Chennai, IN
2 Dept of ECE, Vels university, Chennai, IN
3 Dept of ECE, Vels University, Chennai, IN
1 Dept of ETCE, Sathyabama University, Chennai, IN
2 Dept of ECE, Vels university, Chennai, IN
3 Dept of ECE, Vels University, Chennai, IN
Source
Wireless Communication, Vol 2, No 4 (2010), Pagination:Abstract
Wireless mesh networks (WMNs) have emerged as a key technology for next-generation wireless networking. Because of their advantages over other wireless networks, WMNs are undergoing rapid progress and inspiring numerous applications. In multi-hop wireless mesh networks (WMNs) experience frequent link failures caused by channel interference, dynamic obstacles and/or applications’ bandwidth demands. These failures cause severe performance degradation in WMNs or require expensive, manual network management for their real-time recovery. This paper presents an Autonomous network Reconfiguration System(ARS) that enables a multi-radio WMN to autonomously recover from local link failures to preserve network performance. ARS also improves channel efficiency by more than 90% over the other recovery methods.
Keywords
Hierarchalclustering, Selfish Node.
- Buried Gate MESFET with Frequency Dependence Transconductance Characteristic
Abstract Views :193 |
PDF Views:1
Authors
Affiliations
1 Sathyabama University, Chennai, IN
2 VLSI Dept, Sathyabama University, Chennai, IN
1 Sathyabama University, Chennai, IN
2 VLSI Dept, Sathyabama University, Chennai, IN
Source
Programmable Device Circuits and Systems, Vol 3, No 12 (2011), Pagination: 705-708Abstract
Analytical model for transconductance ac characteristic of buried-gate GaAs MESFET has obtained by solving continuity equation. When optical fiber is inserted into the active layer of buried-gate GaAs MESFET, the modulated light with frequency is 0.1GHz and Photon absorption coefficient (α) = 1.0x106 m-1 are applied to the buried gate GaAs MESFET through the optical fiber without any deviation. The drain current has calculated from that transconductance is noted. Drain-source current has calculated from the mobility of carriers and absorption coefficient of light. The mobility of the carrier controls the transconductance. The number of holes crossing the Schottky junction calculates the photo voltage. The transconductance and photo voltage characteristic indicate very good performance of the device compared to other devices like MESFET under back illumination and MESFET with front illumination having surface gate. It is highly use full in the nanotechnology and high-speed device.Keywords
Gallium Arsenide Optical Field Effect Transistor GaAs OPFET, Metal Field Effect Transistor (MESFET), Optical Field Effect Transistor (OPFET).- The Buried Gate Mesfet with Turning on Characteristic
Abstract Views :165 |
PDF Views:3
Authors
Affiliations
1 ECE, Sathyabama University, Chennai, IN
2 VLSI Dept, Sathyabama University, Chennai, IN
1 ECE, Sathyabama University, Chennai, IN
2 VLSI Dept, Sathyabama University, Chennai, IN
Source
Journal of Advances in Engineering Sciences, Vol 3, No 2 (2010), Pagination: 49-52Abstract
The buried-gate GaAs MESFET with front illumination using turning ON channel current been analyzed by solving continuity equation. This analysis includes the ion implanted buried-gate process. At time 't' is equal to zero, the light through the optical fiber is turning 'ON' has been considered. The channel current has been evaluated and discussed. Buried-gate optical field effect transistor (OPFET) will be highly suitable for microwave communication.- Comparison of BER Performance of Various Adaptive Modulation Schemes in OFDM Systems
Abstract Views :154 |
PDF Views:0
Authors
Affiliations
1 Department of Electronics and Communication Engineering,Vels University, Pallavaram, Chennai - 600117,Tamil Nadu, IN
2 School of Engineering, Vels University, Pallavaram, Chennai - 600117,Tamil Nadu, IN
1 Department of Electronics and Communication Engineering,Vels University, Pallavaram, Chennai - 600117,Tamil Nadu, IN
2 School of Engineering, Vels University, Pallavaram, Chennai - 600117,Tamil Nadu, IN
Source
Indian Journal of Science and Technology, Vol 9, No 40 (2016), Pagination:Abstract
Objectives: The aim of future generation in mobile communication system is impeccably to integrate different types of real time services such as e-mail, speedy communication, video streaming and multimedia applications.Methods/Analysis: The proposed method for future generation is Adaptive Modulation of Orthogonally Frequency Division Multiplexing (AM-Orthogonal FDM) technique. Orthogonal FDM modulation scheme provide maximum data rate, robustness against multipath fading and bandwidth saving up to fifty percentage compared to existing one. The performance of the system is improved according to the channel fading conditions, adaptive modulation is employed in AM-OFDM. Findings: We consider in this research work various adaptive digital modulation techniques and compare the received Bit Error Rate (BER) vs. Signal to Noise Ratio (SNR) of the system in various adaptive modulation techniques with the proposed one. The existing adaptive systemshow the BER is 10-3.9 for 18 dB SNR, however the proposedtechnique show the BER is 10-5.7 for the same SNR value. The BER improvement of proposed oneis 98 percentage compared with existing method. Novelty/Improvement: The novelty of proposed method isgood modulation method ofM-ary Phase Shift Keying is adapted, depending onthe currentchannel conditions measured by channel estimator and this information is fed back to the input.Keywords
AWGN, Adaptive Modulation, Bit Error Rate, Channel Fading, OFDM, Signal to Noise Ratio.Full Text